preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. april 2010 doc id 17439 rev 1 1/11 11 STL23NM60ND n-channel 600 v, 0.150 ? , 19.5 a, fdmesh? ii power mosfet (with fast diode) powerflat? (8x8) hv features the worldwide best r ds(on) * area amongst the fast recovery diode devices 100% avalanche tested low input capacitance and gate charge low gate input resistance high dv/dt and avalanche capabilities application switching applications description the fdmesh? ii series belongs to the second generation of mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company's strip layout and associates all advantages of reduced on- resistance and fast switching with an intrinsic fast- recovery body diode.it is therefore strongly recommended for bridge topologies, in particular zvs phase-shift converters. figure 1. internal schematic diagram type v dss (@t jmax ) r ds(on) max i d STL23NM60ND 650 v < 0.180 ? 19.5 a (1) 1. this value is rated according to r thj-case. 3 3 3 ' $ 0 o w e r & |